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                1 10 100 0.1 1 10 10 0 20s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 10 0 a ds d i , drain-to-source current (a) 20s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v v , drain-to-source voltage (v) 1 10 100 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 25v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 3.8a d

4 www.irf.com 
   
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" # $  0 200 400 600 800 1000 1200 1400 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 1020304050 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 i = 3.8a v = 44v v = 28v d ds ds 1 10 100 0.4 0.6 0.8 1.0 1.2 1. 4 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 0.1 1 10 100 0.1 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) t = 25c t = 150c single pulse 100s 1ms 10ms a a j 10s

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 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 t , rectangular pulse duration (sec) 1 d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a thermal response (z ) thja p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a

6 www.irf.com    (
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 0 50 100 150 200 250 25 50 75 100 125 15 0 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) v = 25v i top 1.7a 3.0a bottom 3.8a dd d   /
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www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 0 7  67:: & 9% &   
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  p = d e s i gn at e s l e ad -f r e e product (optional) a = assembly site code top bottom logo 314p axxxx part number int ernat ional rect ifier hexfet product marking fl014 t his is an irfl014 lot code dat e code (yyww) yy = ye ar ww = week

www.irf.com 9 
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. 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641 ) 15.70 (.619 ) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) min. 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel contains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) max. 14.40 (.566) 12.40 (.488) 4 4 data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/04


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